feb. 20 12 version 1. 1 magnachip semiconductor ltd . 1 m dv1595s C single n - channel trench mosfet 30v absolute maximu m ratings (ta = 25 o c) characteristics symbol rating unit drain - source voltage v dss 30 v gate - source voltage v gss 12 v continuous drain current (1) t c =25 o c i d 36.1 a t c = 10 0 o c 22.8 t a = 25 o c 13. 4 (3) t a = 70 o c 1 0 . 8 (3) pulsed drain current i dm 8 0 a power dissipation t c =25 o c p d 24.5 w t c = 10 0 o c 9.8 t a = 25 o c 3.4 (3) t a = 70 o c 2.2 (3) single pulse avalanche energy (2) e as 48 mj junction and storage temperature range t j , t stg - 55~15 0 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 36 o c/w thermal resistance, junction - to - case r jc 5.1 m dv1595s single n - channel trench mosfet 30 v, 36.1 a, 10.7 m features ? v ds = 3 0v ? i d = 36.1 a @v gs = 10v ? r ds(on) < 10.7 m @v gs = 10v < 13.0 m @v gs = 4.5v ? 100% uil tested ? 100% rg tested ? sbd built in general description the md v1595s uses advanced magnachip s mosfet technology, which provide s high performance in on - state resistance , fast switching performance and excellent quality . MDV1595S is suitable for dc/dc converter and general purpose applications. p dfn 33 s s s g g s s s d d d d d d d d d g s
feb. 20 12 version 1. 1 magnachip semiconductor ltd . 2 m dv1595s C single n - channel trench mosfet 30v ordering information p art number temp. range package packing ro hs status mdv15 9 5 s u rh - 55~150 o c p dfn 33 tape & reel h alogen free electrical characteristics (t j = 25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1. 0 1. 5 2. 0 drain cut - off current i dss v ds = 30 v, v gs = 0v - - 0.5 m a t j = 12 5 o c - - 100 gate leakage current i gss v gs = 12 v, v ds = 0v - - 1 00 na drain - source on resistance r ds(on) v gs = 10v, i d = 13 a - 8.2 10.7 m t j = 125 o c - 14.9 13.5 v gs = 4.5v, i d = 11 a - 10.0 13.0 forward transconductance g fs v ds = 5v, i d = 1 3 a - 27.3 - s dynamic characteristics total gate charge q g(10v) v ds = 1 5.0 v, i d = 1 3 a, v gs = 10v 15.6 22.3 29.0 nc total gate charge q g(4.5v) 6.9 9.9 12.9 gate - source charge q gs - 3.0 - gate - drain charge q gd - 2.7 - input capacitance c iss v ds = 1 5.0 v, v gs = 0v, f = 1.0mhz - 1426 1853 pf reverse transfer capacitance c rss - 75.4 98 output capacitance c oss - 198 257 turn - on delay time t d(on) v gs = 10v, v ds = 1 5.0 v, i d = 1 3 a, r g = 3 . 0 - 7.8 - ns rise time t r - 3.1 - tu r n - off delay time t d(off) - 33.5 - fall time t f - 4.3 - gate resistance r g f=1 mhz 0 .5 1.0 2 .0 drain - source body diode characteristics source - drain diode forward voltage v sd i s = 1 a, v gs = 0v - 0.45 0.7 v body diode reverse recovery time t rr i f = 1 3 a, dl/dt = 100a/s - 24.2 36.3 ns body diode reverse recovery charge q rr - 16.4 24.6 nc note : 1. surface mounted f r 4 board with 2oz. copper. continuous current at t c =25 is silicon limited. 2. e as is tested at starting tj = 25 , l = 0.1mh, i as = 1 6 . 8 a, v dd = 27v, v gs = 10v. 3. t < 10sec
feb. 20 12 version 1. 1 magnachip semiconductor ltd . 3 m dv1595s C single n - channel trench mosfet 30v fig.1 on - region characteristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.5 transfer characteristics fig.6 body diode forward voltage variation with source current and temperature 5 10 15 20 25 30 35 40 45 50 6 7 8 9 10 11 12 v gs = 10v v gs = 4.5v drain-source on-resistance [m ? ] i d , drain current [a] 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 notes : i d = 13a t j = 25 r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 0.0 0.5 1.0 1.5 20 40 60 80 100 t j =25 notes : v gs = 0v i dr , reverse drain current [a] v sd , source-drain voltage [v] 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 3 6 9 12 15 18 21 24 27 30 v gs , gate-source voltage [v] t j =25 notes : v ds = 5v i d , drain current [a] 0 1 2 3 4 5 0 10 20 30 40 50 2.5v v gs = 10v 3.5v 4.0v 3.0v i d , drain current [a] v ds , drain-source voltage [v] -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 notes : 1. v gs = 10 v 2. i d = 13 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
feb. 20 12 version 1. 1 magnachip semiconductor ltd . 4 m dv1595s C single n - channel trench mosfet 30v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current vs. case temperature fig.11 transient thermal response curve 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 3 100 s 10 s 1 s 100 ms dc 10 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 10 20 30 40 50 i d , drain current [a] t c , case temperature [ ] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc , thermal response t 1 , rectangular pulse duration [sec] 0 5 10 15 20 25 0 2 4 6 8 10 v ds = 15v note : i d = 13a v gs , gate-source voltage [v] q g , total gate charge [nc] 0 10 20 30 0 400 800 1200 1600 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [f] v ds , drain-source voltage [v]
feb. 20 12 version 1. 1 magnachip semiconductor ltd . 5 m dv1595s C single n - channel trench mosfet 30v package dimension pdfn33 (3.3x3.3mm) d imensions are in millimeters, unless otherwise specified (unit: mm)
feb. 20 12 version 1. 1 magnachip semiconductor ltd . 6 m dv1595s C single n - channel trench mosfet 30v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers us ing or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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